In practical applications, the frequency of thyristor switching is mainly affected by the following factors
Controllable silicon and IGBT are two commonly used power semiconductor devices in the field of modern power electronics.
Static phase shifter is connected in series in the rotor circuit of a motor, which changes the phase relationship between the rotor current and rotor voltage, and then changes the phase relationship between the stator current and voltage of the motor, in order to improve the power factor and efficiency of the motor itself, increase the motor overload capacity, reduce the stator current of the motor, and reduce the motor's own losses.
The relationship between the absorption power (peak value) of transient voltage and the pulse width of transient voltage is only given in the manual as the absorption power (peak value) at a specific pulse width. However, the pulse width in the actual circuit is unpredictable and needs to be estimated in advance. Wide pulses should be downgraded for use.
1. Circuit design issues; 2. The frequency is too high; 3. Insufficient heat dissipation design; 4. Incorrect selection of MOS transistor
During normal operation, the substrate of a P-channel enhanced MOS transistor must be connected to the source, and the voltage Vds at the drain center should be negative to ensure that the PN junction between the two P regions and the substrate is reverse biased. At the same time, in order to form a conductive channel near the top surface of the substrate, the voltage Vgs between the gate and the source should also be negative.
